Manufacturable process for the growth of metamorphic InGaAs/InAlAs/InP heterostructures has been realized on a large-scale production molecular-beam epitaxy reactor capable of growing on multiple 4 in. or 6 in. GaAs wafers. Developed metamorphic buffer technology is based on graded InAlAs layer with In composition changing from <5% up to the desired composition to be used in the device layers. Both metamorphic high electron mobility transistors and heterojunction bipolar transistors (on GaAs substrates) as well as their lattice-matched counterparts (on InP substrates) were grown and characterized. Photoluminescence mapping and multipoint Hall measurements demonstrate excellent cross-wafer uniformity and electronic transport properties. Fabricated large-area devices show no significant difference in current gain or linearity characteristics for the metamorphic structures compared to their lattice-matched counterparts.