For the first time, we present the results of Kelvin probe force microscope studies on beveled samples. The ease of sample preparation and simplicity of the measurement make this technique a good candidate for the rapid characterization of semiconductor multilayers. The GaSb/InAs and Ge/SiGe/Si samples presented demonstrate both the utility and the limits of the technique. Beveling has allowed us to easily image quantum wells of 7.5 nm thickness, which is well beyond the resolution available on cleaved samples. Bevel and sample roughness are shown to be the most critical parameters in obtaining good results.