Previously, a novel method for fabricating microfluidic and microelectromechanical devices with buried microchannel structures using thermally sacrificial polymers was reported. These previous methods required separate lithographic and etching sequences to pattern the sacrificial polymer. In this work, a more advanced approach in which the sacrificial material is radiation sensitive and can be patterned directly using standard lithographic techniques is explored. The lithographic performance of a new class of photosensitive polynorbornene (PNB) sacrificial materials has been characterized. The effect of soft bake and postexposure bake (PEB) on the cross-linking of photodefinable PNB has also been investigated. It was found that significant cross-linking of PNB occurs after exposure during the subsequent postexposure bake. However, this phenomenon is strongly dependent on the soft bake conditions used in preparing the sample, presumably due to varying levels of residual solvent content. This may be due to the high mass transport of the reactive species because of evaporation of residual solvent and shrinking of polymer matrix during the PEB process. No noticeable influence of residual solvent on cross-linking has been found during exposure.