화학공학소재연구정보센터
Journal of Chemical Physics, Vol.117, No.19, 8867-8878, 2002
Host-guest charge transfer states: CN doped Kr and Xe
The host-guest charge transfer absorption of CN doped krypton and xenon matrices are identified through direct analogy with the previously assigned transitions of Cl/Kr and Cl/Xe. These intense, structured absorption bands appear with the onset at 245 nm in Kr and 360 nm in Xe. Excitation of the CN/Kr charge transfer band at 193 nm leads to emission over CN(A((2)Pi)-->X((2)Sigma)) transition, indicating that an efficient curve crossing precludes the ionic state from radiating. No emissions were seen in CN/Xe when excited at 193 nm. The charge transfer absorption spectrum of CN/Kr is reproduced through an extended diatomics-in-ionic-systems treatment, using accurate ab initio pair potentials and transition dipoles as input, without further adjustment. The delocalized hole states are then analyzed in real-space, using atomic bases distributed over as many as eleven shells surrounding the CN- center. The ionic states are well described as J=1/2, 3/2 valence bands bound to CN-, with a substructure that cannot be exclusively assigned to a single quantum number. The strong absorptions terminate on states in which 70%-95% of the hole density remains on the first nearest neighbor shell, with hole densities of 1%-5% extended out to R=8 Angstrom. In higher ionic states, with weaker transition dipoles, the hole density maximizes on shells removed by 10 Angstrom from the ionic center. Although these delocalized states provide channels for charge separation via self-trapping of holes, save for a weak signal from the impurity trapped hole at H+ centers, the experiments do not provide evidence for significant charge separation.