Highly oriented crystalline beryllium carbide films were grown on Be(0001) substrate using C-60 as a carbon source. The films were characterized by low energy electron diffraction, photoemission spectroscopy, and near-edge x-ray absorption fine structure. C-60 begins to decompose on Be(0001) at about 250 degrees C, forming beryllium carbide completely after further annealing to 450 degrees C. The beryllium carbide film is observed as sets of (100) surfaces, arranged in three domains rotated by 120 degrees from each other. Extra C-60 deposited on Be2C(100)/Be(0001) at temperature below 200 degrees C and heated to 450 degrees C leads to an increase of the film thickness, indicating the decomposition of C-60 on Be2C(100)/Be(0001) at an elevated temperature and formation of new carbide layers on the sample surface. It further implies that the Be2C/Be surface has the ability to supply Be atoms to interact with the new carbon atoms on top, and that Be atoms can diffuse through the beryllium carbide layer at the temperature of 450 degrees C, possibly involving a vacancy mechanism.