The effect of surface treatment in SiC on the change of Schottky characteristics was interpreted using X-ray photoelectron spectroscopy. The binding energies of both C-Si and Si-C bonds were simultaneously increased about 0.5 eV at the inductively coupled plasma (ICP)-treated surface, meaning that the Fermi level, E-F, shifted toward the conduction bandedge. The increase in the Si/C atomic ratio with the ICP treatment provides evidence that a number of carbon vacancies, V-C, were produced at the treated surface. This supports that E-F pins at the energy level of V-C near the conduction bandedge, leading to the reduction of Schottky barrier height for the transport of electrons as well as independence of Schottky barrier height on the metal work function.