Journal of Vacuum Science & Technology B, Vol.20, No.6, 3063-3066, 2002
Two-dimensional dopant profiling of ultrashallow junctions by electron holography
Electron holography using a transmission electron microscope equipped with a Moellenstedt biprism has emerged as a viable technique for creating two-dimensional voltage maps of semiconductor devices. We. are presenting an introduction to this dopant profiling method. Practical details are given on sample preparation, instrumentational considerations, and data interpretation.