Stacked silicon and zirconium dioxide (SiO2/ZrO2) films have been deposited on strained-Si(0.91)Geo(0.09) layer at a low temperature using zirconium tetratert butoxide (ZTB) and ZTB/O-2 in a microwave plasma deposition system. Electrical properties of the as-deposited and annealed (in N-2 at 500 degreesC) samples have been measured from the high frequency capacitance-voltage, conductance-voltage and current-voltage characteristics of metal insulator semiconductor capacitor structures fabricated using the stacked dielectrics. The superiority of stacked (SiO2/ZrO2) gate dielectric is shown.