화학공학소재연구정보센터
Journal of Chemical Engineering of Japan, Vol.36, No.2, 119-125, 2003
Cu bump interconnections in 20 mu m-pitch at low temperature utilizing electroless tin-plating on 3D stacked LSI
The electroless tin-plating on copper has the preferable characteristics for the thermal compression bonding, although it is easy to decrease in thickness by heating at the bonding because of the diffusion with copper. Therefore, the bonding profile was determined to have lower pre-heating to evaluate the bondability with copper-bumps dressed thin tin-caps in 20 mum-pitch. Then, the possibility of the interconnections in 20 mum-pitch was confirmed. Bonding temperature was 150degreesC and bonding force was 24.5 N. Finally, the tin-cap on a through-hole electrode (T-COTE) was performed in the electroless plating and the basic bonding condition was evaluated on the vertical interconnections. The results showed the sufficient joint between the copper electrodes through the Si die and the adjacent copper bumps on the interposer.