Journal of Physical Chemistry B, Vol.107, No.14, 3137-3140, 2003
Formation of single-walled carbon nanotubes via reduced-pressure thermal chemical vapor deposition
We report the growth of carbon nanotubes (CNTs) via reduced-pressure chemical vapor deposition (CVD), using a gas mixture of methane/hydrogen and iron/molybdenum catalyst supported by alumina nanoparticles. The CNTs are either single-walled or double-walled as characterized by transmission electron microscopy. Investigation of various growth parameters indicates that CNT growth is limited by the gas supply when CVD is performed in the temperature range of 750-900 degreesC, whereas the limiting factor for growth at 700 degreesC is the rate of carbon diffusion through the catalyst particles. The density of CNTs changes with CVD pressure as well as gas flow rates when growth is limited by gas supply. We also use a single-step lithographic approach to form catalyst islands on top of patterned electrodes and to selectively grow CNTs bridging neighboring electrodes. The process yields both semiconducting and metallic CNTs as characterized by current-voltage measurements.