Thin Solid Films, Vol.428, No.1-2, 181-184, 2003
Doping impurity distribution and crystal quality evaluation of AlGaAs : Si films (0.22 < x < 0.86) by electrochemical etching technique
We assessed the capability of electrochemical voltage-capacitance method to evaluate doping impurity distribution in AlGaAs:Si thin films in a wide range of composition. It was found that etching behaviour significantly depends on Al content. Despite the surface of AlxGa1-xAs is rather roughing the doping depth profile can be determined in an accurate way. The data extracted from the electrochemical voltage-capacitance measurements, Hall measurements, and secondary ion mass spectroscopy were thoroughly analysed. The total donor concentration was estimated for studied films.