Journal of Vacuum Science & Technology B, Vol.21, No.2, 760-762, 2003
Temperature-dependent characteristics of an Al0.2Ga0.8As/ln(0.22)Ga(0.78)As pseudomorphic double heterojunction modulation doped field-effect transistor with a GaAs/AlGaAs superlattice buffer layer
The Al0.2Ga0.8As/In0.22Ga0.78As pseudomorphic double heterojunction modulation doped field-effect transistor with a superlattice GaAs/Al0.2Ga0.8As buffer layer has been successfully grown by a molecular beam epitaxy (MBE) system, and investigated its temperature-dependent characteristics. The use of a superlattice buffer layer improved the degradation of the device performance at elevated temperatures. For a 1.5 x 125 mum(2) gate dimension, a voltage gain as high as 107 is found at 460 K. Besides, the shift in the threshold voltage is-about 0.222 V from 300 to 460 K. (C) 2003 American Vacuum Society.