The Removal of the Hydrogen Cyanide (HCN) Using the Technology of Plasma Treatment

Kyung-soo Kim; Il-Hyun Jung

Journal of Industrial and Engineering Chemistry, Vol.9, No.3, 314-322, May, 2003

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The Removal of the Hydrogen Cyanide (HCN) Using the Technology of Plasma Treatment

Kyung-soo Kim, and Il-Hyun Jung^†

Department of Chemical Engineering, Dankook University, Seoul 140-714, Korea

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The current work investigated the removal ratio of hydrogen cyanide by rf-plasma. The concept of rf-induced plasma was confirmed based on a profile of the particle densities where the plasma concentration was highest at the center of the reactor and HCN was converted to NO2, NO3, and N2O. The HCN removal ratio increased with the rf-power and sample gas flow rate under all experimental condition. Also, the improved removal ratio and energy yield were attributed to the concentration of oxidant species (O-ions). Therefore, based on injecting excess oxygen into the reactor, an efficient process can be designed for restrictive regulation.

Keywords:rf-plasma;particle density;HCN removal ratio;energy yield

[References]

Kim JG, Kim JY, Rist Yongu Nonmun (in Korea), 264 (1997)
Mok YS, Ham SW, Chem. Eng. Sci., 53(9), 1667 (1998)
Vogtlin GE, Penetrante BM, Non-Thermal Plasma Techniques for Pollution Control; Part B, B.M. Penetrante and S.E. Schultheis, Eds, Springer-Verlag, 187 (1993)
Mok YS, Kim KT, Nam IS, HWAHAK KONGHAK, 38(1), 97 (2000)
Lin YH, Adomaitis RA, J. Comput. Phys., 171, 731 (2001)
Richards AD, Thompson BE, Sawin HH, Appl. Phys. Lett., 50(9), 492 (1987)
Lin YH, Adomaitis RA, Phys. Lett. A, 243(3), 142 (1998)
Passchier JDP, Goedheer WJ, J. Appl. Phys., 74(6), 3744 (1993)
Gogolides E, Sawin HH, J. Appl. Phys., 72(9), 3988 (1992)
Alfred Grill, Cold Plasma in Materials Fabrication; from Fundamentals to Applications, IEEE PRESS (1993)
Yang CL, Meier D, Kravets Z, Yamamoto T, Environ. Prog., 17(3), 183 (1998)
Dagaut P, Luche J, Cathonnet M, Fuel, 80, 979 (2001)
Jeon BP, Characteristics of the a-Si:H and SiO₂ Thin Films Prepared by ECR Plasma Process, Dankook University, Thesis for Doctorate
Kwak DJ, Ha YJ, Shin YS, Choi YS, J. Korean Inst. Electrical Electronic Mater. Eng., 11(3), 248 (1998)

[Referenced By]

[Related Articles]

[1] Kim JG, Kim JY, Rist Yongu Nonmun (in Korea), 264 (1997)

[2] Mok YS, Ham SW, Chem. Eng. Sci., 53(9), 1667 (1998)

[3] Vogtlin GE, Penetrante BM, Non-Thermal Plasma Techniques for Pollution Control; Part B, B.M. Penetrante and S.E. Schultheis, Eds, Springer-Verlag, 187 (1993)

[4] Mok YS, Kim KT, Nam IS, HWAHAK KONGHAK, 38(1), 97 (2000)

[5] Lin YH, Adomaitis RA, J. Comput. Phys., 171, 731 (2001)

[6] Richards AD, Thompson BE, Sawin HH, Appl. Phys. Lett., 50(9), 492 (1987)

[7] Lin YH, Adomaitis RA, Phys. Lett. A, 243(3), 142 (1998)

[8] Passchier JDP, Goedheer WJ, J. Appl. Phys., 74(6), 3744 (1993)

[9] Gogolides E, Sawin HH, J. Appl. Phys., 72(9), 3988 (1992)

[10] Alfred Grill, Cold Plasma in Materials Fabrication; from Fundamentals to Applications, IEEE PRESS (1993)

[11] Yang CL, Meier D, Kravets Z, Yamamoto T, Environ. Prog., 17(3), 183 (1998)

[12] Dagaut P, Luche J, Cathonnet M, Fuel, 80, 979 (2001)

[13] Jeon BP, Characteristics of the a-Si:H and SiO₂ Thin Films Prepared by ECR Plasma Process, Dankook University, Thesis for Doctorate

[14] Kwak DJ, Ha YJ, Shin YS, Choi YS, J. Korean Inst. Electrical Electronic Mater. Eng., 11(3), 248 (1998)