Lanthanum modified lead zirconate titanate (Pb0.91La0.09)(Zr0.65T0.35)O-3 (PLZT) ferroelectric thin films were grown on Pt/Ti/SiO2/Si(1 0 0) and fused quartz substrates using a sol-gel method with rapid thermal annealing processing. The results showed that the highly (I I I)-oriented pervoskite PUT thin film growth on Pt/Ti/SiO2/Si(l 0 0) substrates. The electrical measurements were conducted on PLZT films in metal-ferroelectric-metal capacitor configuration. The PLZT thin films annealed at 600 degreesC showed well-saturated hysteresis loops with remanent polarization and coercive electric field values were 10.3 muC/cm(2) and 36 kV/cm, respectively, at an applied field of 300 kV/cm. At 100 kHz, the dielectric constant and dielectric loss of the film are 682 and 0.021, respectively The PUT thin film on fused quartz substrate, annealed at 600 degreesC, exhibited good optical transmittance, the band gap of optical direct transitions is 3.89 eV.