NiSi0.8Ge0.2 film formed on a strained Si0.8Ge0.2 layer epitaxially grown on a Si(100) substrate wafer is morphologically stable up to 750 degreesC. The NiSi0.8Ge0.2 film is found to be strongly oriented along its <010> direction. This remarkable stability is thus possibly caused by the tendency of an epitaxial alignment between the NiSi0.8Ge0.2 film and the Si0.8Ge0.2 layer. The presence of Ge in NiSi forming the ternary solution NiSi0.8Ge0.2 hinders the formation of NiSi2 even at 850 degreesC. (C) 2003 Elsevier Science B.V. All rights reserved.