Exposure to hydrogen significantly cools the filament from the set temperature. This can mainly be explained by the power dissipation due to dissociation of hydrogen. The effect of silane on the filament temperature is more complicated. Below a certain threshold temperature (1850 K for W, 1750 K for Ta) a silicon-rich silicide is deposited on the filament, partially shielding it for further dissociation reactions. A drop in deposition rate accompanies this. Above another but higher threshold temperature (2000 K for W and 1950 K for Ta) the silicon-rich silicide is evaporated from the filament and the dissociation reactions occurred and thus the deposition rate are restored. Below these threshold temperatures (2 2 0) oriented materials can be produced. (C) 2003 Elsevier Science B.V. All rights reserved.