The growth of CuGaS2 epilayers, by the simultaneous evaporation of the constituent elements in vacuum is investigated. Growth under Cu-rich conditions resulted in the formation of a CuS secondary surface phase. This phase, recognised as dark-blue crystallites, resulted in a number of additional X-ray diffraction lines. It was possible to selectively remove this phase using a potassium cyanide etchant. Transmission electron microscopy analysis proved that epitaxy is indeed possible despite the simplicity of the growth method. Raman spectroscopy revealed lines inherent to CuGaS2 and an additional, unidentified mode at similar to472 cm(-1) was observed for Cu-rich material. (C) 2003 Elsevier Science B.V. All rights reserved.