The status of our pilot process for Cu(In,Ga)(S,Se)(2) (CIGSSe) thin films on 60 X 90 cm(2) glass substrates is described. In a newly developed large area rapid thermal processing (RTP) furnace the CIGSSe layer is formed from sputtered metallic precursors coated by an evaporated Se film. We present device characteristics of pilot line modules and discuss material issues critical for up scaling of our lab process. We demonstrate that thin silicon nitride layers effectively impede the Na diffusion from the float glass. The accurate sodium dose required for high efficiency devices is deposited on the Mo layer. The Na content in the reacted CIGSSe film is affected by oxygen in the Mo. The loss of sodium can be eliminated choosing appropriate Mo sputtering conditions. Cu(Ga) and In can be sputtered in a multi ( > 200) layer sequence on a lab scale. In the pilot process, only a few alternating layers are deposited. The structural properties of both types of precursors and reacted CIGSSe films are investigated. Absorbers processed in the large area, pilot line RTP show good crystal quality, grain sizes and uniformity of composition. Maps of the photoluminescence decay rate are shown. Average lifetimes of 30 ns are obtained. Cell efficiencies up to 13.5% are obtained using pilot line precursor and large area RTP. The module process currently is being optimized. Best circuit efficiencies on 30 X 30 cm(2) substrates are at 11% to date. (C) 2003 Elsevier Science B.V. All rights reserved.