We have investigated the effect of As dose on SiO2 growth on CoSi, films. As ions were implanted into Si-substrates with doses ranging from 1 X 10(13) to 1 X 10(16) cm(-2). After formation Of CoSi2, SiO2 was deposited by low-pressure chemical vapor deposition (LPCVD) using tetraethyl orthosilicate. The growth rates of LPCVD SiO2 on the CoSi2 films rapidly increased with arsenic doses above 5 X 10(15) cm(-2). Arsenic, which is diffused into the CoSi, films during the LPCVD SiO2 deposition, is a major cause of abnormal oxide growth. Thus, the arsenic doping level in Si has to be carefully controlled to prevent abnormal SiO2 growth on CoSi2 films. (C) 2003 Elsevier Science B.V. All rights reserved.