We have deposited high-quality cubic alpha-Ta films by incorporating an Ar/N-2 Plasma pre-treatment process prior to the deposition of the Ta film. The alpha-Ta films have low resistivity of approximately 30.6 muOmega cm and near nanocrystalline texture. An ultrathin amorphous Ta(N) interlayer, generated during the Ar/N-2 pre-treatment on the SiO2 surface, plays a critical role on the nucleation in the initial stage and subsequent growth of alpha-Ta films. This method is reliable and could be easily applied to the ultralarge-scale integrated circuits. (C) 2003 Elsevier Science B.V. All rights reserved.