Thin Solid Films, Vol.434, No.1-2, 264-270, 2003
Frequency dependent conductivity of aluminium nitride films prepared by ion beam-assisted deposition
The frequency dependent conductivity of different thin AlN films measured in the frequency range 10 Hz to 2 MHz for temperature between 300 and 573 K is reported. It is observed from the experimental data that the AC conductivity in the AlN thin films is proportional to omega(s). The value of s is found to be temperature dependent, which shows a decreasing trend with temperature. The correlated barrier hopping model is the most likely mechanism for the electron transport. The polaron binding energy (W-m), the height of Coulomb barrier (W), and the characteristic relaxation time (tau(0)) have been calculated. (C) 2003 Elsevier Science B.V. All rights reserved.