The inductively coupled plasma (ICP) device is one of the high-density plasma sources being used for the present integrated circuit etching process on an ultra-large scale. Here, we develop a Fokker-Planck code for the ICP source, and evaluate an electron energy diffusion coefficient based on the solution of the wave equations for an ICP reactor. The electron energy distribution function (EEDF) dependence on various external parameters, such as wave frequency, gas pressure and magnetic field, is investigated using the Fokker-Planck code. The effects of changing external parameters on ICP heating characteristics are also discussed. It is shown that the heating of low-energy electrons is enhanced with increasing system collisionality, which is defined as the ratio of collision frequency to effective wave frequency. (C) 2003 Elsevier Science B.V. All rights reserved.