A structural electron microscopy study of (I I I)Si samples implanted with C+ + N+ at low energies (30 keV) and high-doses (5 X 10(17) at. cm(-2) for carbon ions and 6.7 X 10(17) at. cm(-2) for nitrogen ions) is reported in this paper. Implantations were carried out both at room and high (600 degreesC) temperatures. Samples implanted at high temperature and annealed after implantation show a buried layer consisting of a mixture of some amorphous component and single-crystalline crystallites (SiC and probably Si3N4 and C3N4) well oriented with respect to the (I I 1)Si substrate. Both inclusions and amorphous phases are included into a well-aligned Si matrix. The crystalline structure of buried layers resulting after implantation at room and higher temperatures is reviewed. The obtained structural results are confronted to the actual literature. These are encouraging results in order to use the ion implantation to obtain stoichiometric crystalline thin layers.