In order to apply device quality polycrystalline silicon obtained by the hot-wire chemical vapour deposition technique in industrial processes a high deposition rate is desirable. Meanwhile it is important to maintain good thickness uniformity over large areas. To achieve this the catalytic area needs to be increased. The influence of increasing the catalytic area on the deposition rate and material properties was studied. Proportionally increasing the feedstock gas flows leads to an unexpected drop in deposition rate. The dissociation of the gases causes the filament temperature to decrease. Below 1850 K the dissociation process is limited by the silicon deposition on the filament. This leads to a drastic drop in deposition rate. By adjusting the process parameters to the increased catalytic area, device quality polycrystalline silicon is again obtained. The deposition rate of polycrystalline silicon has been increased from 6 to 21 Angstrom/s while maintaining the material properties.