Various fluoride films on a glass substrate were prepared and characterized to provide a seed layer for silicon (SO film growth. The X-ray diffraction analysis on CaF2/glass illustrated (2 2 0) preferential orientation and showed lattice mismatch less than 5% with Si. We achieved a fluoride film with breakdown electric field higher than 1.27 MV/cm, leakage current density less than 10(-8) A/cm(2), and relative dielectric constant less than 5.6. This paper demonstrates microcrystalline silicon (muc-Si) film growth at a low substrate temperature of 300 degreesC by using a CaF2/glass substrate. The muc-Si films exhibited crystallization in (1 1 1) and (2 2 0) planes, grain size of 700 Angstrom, crystalline volume fraction over 65%, dark- and photo-conductivity ratio of 124, activation energy of 0.49 eV, and dark conductivity less than 4 X 10(-7) S/cm.