We studied the growth of super-grain polycrystalline silicon by silicide mediated crystallization of amorphous silicon (a-Si) using a pulsed rapid thermal annealing (RTA). The Ni particles of 4.6 X 10(12) cm(-2) were scattered onto the a-Si and then heated at various temperatures in the RTA system. The grain size was found to decrease from 41 to 26 mum with increasing crystallization temperature from 650 to 750 degreesC. The formation of nuclei and the grain growth rate from the nuclei have been investigated as a function of temperature. The density of NiSi2 nuclei increases from 9.47 X 10(4) to 1.89 x 10(5) cm(-2) as crystallization temperature increases from 650 to 750 degreesC. The grain growth velocity from the nuclei was found to be 8.6 X 10(-5) cm s(-1) at 750 degreesC.