SnS2 films have been deposited on glass and alumina plate substrates by the reactions between an organotin precursor [tetrabuyltin, (CH2CH2CH2CH3)(4)Sn] and carbon disulfide in n-hexane at the temperature range 180-200 degreesC for 10-40 h. The reaction system was oxygen free and applied at a moderate temperature. The films so prepared were characterized by techniques of X-ray diffraction, Scanning electron microscopy, Raman and Mossbauer spectroscopies. The films deposited on glass as well as on alumina plate have an average thickness of 30 mum, but have different rose-like morphologies, which are influenced by both the anisotropic growths of crystals and the different substrate structures. Photoluminescence measurements show that the films have an emission peak at approximately 590 nm. (C) 2003 Elsevier Science B.V. All rights reserved.