Si1-xGex /Si heterostructures are useful for numerous device applications where device performance is improved by band offsets and/or increased carrier mobility. The use of selective epitaxial growth for the implementation of Si1-xGex has some advantages compared to a nonselective growth process. However, some issues such as thickness nonuniformity (Imicroloading on a micrometer scale and gas depletion on a wafer scale) and facet formation must be solved. In this paper, we give a detailed overview of our selective Si1-xGex growth process in a standard production-oriented chemical vapor deposition system for Ge contents between 0 and 32%. Our process allows layer deposition with no pattern dependence of the growth rate and Ge content (no microloading) and with a wafer scale layer nonuniformity that is better than the accuracy of the measurement techniques (similar to2%). Facet formation was avoided by choosing the correct growth conditions and by preventing lateral growth over the mask material. Selective epitaxial layers did not show a degradation of photoluminescence characteristics. The layer quality is further demonstrated by the performance of Si1-xGex heterojunction bipolar transistors (0.35 and 0.25 mum technology), and p-type Si1-xGex heterojunction metal oxide semiconductor devices (effective gate length down to 70 nm). (C) 2003 The Electrochemical Society.