The abstraction reaction kinetics of two radical surface reactions were investigated on silicon, photoresist (PR), alumina, and quartz using a high vacuum beam system with independent beams of D and F atoms. Modulated beam mass spectrometry was used to measure the following heteronuclear abstraction probabilities from Si, PR, Al2O3, and SiO2 at 286 K: F atoms abstracting adsorbed D atoms from PR (gammaFD,PR = 0.25); Si (gammaFD,Si = 0.22); quartz (gammaFD,SiO2 = 0.18); alumina ( gammaFD,Al2O3 = 0.12), and D atoms abstracting adsorbed F atoms from PR (gammaDF,PR<0.02); Si (gammaDF,Si <0.02), alumnia (YgammaDF,Al2O3 <0.02); and quartz (gammaDFSiO(2) <0.02). These probabilities were also measured at 344 K. The rate of D abstracting F increased from below the limit of detection at 286 K to gammaDF,Si = 0.05 on Si at 344 K, suggesting that this process is thermally activated, but no significant effect of temperature was observed for F abstracting D on any surface tested. Reactive site densities were also estimated for these surfaces: PR (sigma(PR) = 2.0X10(15)/cm(2)), Si (sigma(Si) = 2.0X10(15)/cm(2)), quartz (sigmaSiO(2) = 8.0X10(14)/cm(2)), and alumina (sigmaAl(2)O(3) = 5.0X10(14)/cm(2)). (C) 2003 American Vacuum Society.