Ultrathin semiconductor solid-state emitters (SSEs) have specific electron emission properties. In particular, the values of the turn-on field are 100 times less than in conventional field emission and there is a very rapid increase of the current at high field leading to high emission current densities. In this study, the emission behavior from SSE as a function of the cathode temperature (from room temperature to 425 K) and thickness of the ultrathin semiconductor layer (from 2 to 5 nm) are reported. (C) 2003 American Vacuum Society.