Previous Article Next Article Table of Contents Journal of Materials Science Letters, Vol.22, No.22, 1581-1583, 2003 DOI10.1023/A:1026328323174 Export Citation Formation mechanism of amorphous layer at the interface of Si(111) substrate and AlN buffer layer for GaN Hu GQ, Kong X, Wang YQ, Wan L, Duan XF, Lu Y, Liu XL Please enable JavaScript to view the comments powered by Disqus.
