페로센으로부터 증착된 Fe-C:H 막에 대한 밴드갭 분석

김경수; 정일현; Kyung-soo Kim; Il-Hyun Jung

Journal of the Korean Industrial and Engineering Chemistry, Vol.15, No.1, 70-74, February, 2004

Export Citation

페로센으로부터 증착된 Fe-C:H 막에 대한 밴드갭 분석

The Analysis of Band Gap for Fe-C:H Films Deposited from Ferrocene

김경수, 정일현 ^†

단국대학교 화학공학과, 서울 140-714

Kyung-soo Kim, and Il-Hyun Jung^†

Department of Chem. Eng., Dankook Univ., San 8, Hannam-dong, Yongsan-gu, Seoul 140-714, Korea

E-mail:

초록

페로센 (Fe(C₅H₅)₂)으로 RF 플라즈마를 이용하여 Fe-C:H 막을 증착하였다. 증착된 Fe-C:H 막은 C-H_n, C=C, C-CH_n으로 구성되어 있었으며, Raman과 XRD 분석을 이용하여 계면에서 Fe-Si의 결합을 확인할 수 있었다. 또한 Fe-Si 클러스터에 의하여 island 성장이 진행되었다. 증착 속도는 수소의 유량이 증가할수록 선형적으로 증가하였다. Fe-C:H 막과 Fe-Si의 밴드갭은 각각 모든 실험 조건에서 약 3.8 eV과 0.85~0.86 eV이었다. 막의 Urbach tail과 결함수는 수소 유량이 증가할수록 감소하였다.

Fe-C:H films were deposited in a RF plasma with ferrocene (Fe(C₅H₅)₂). The deposited Fe-C:H films consisted of C-H_n, C=C, and C-CH_a, We confirmed the Fe-Si bonding in the interface using Raman and XRD analysis. Also, island growth was occured by the formation of Fe-Si cluster. The deposition rate linearly increased with the flow rate of hydrogen. In all conditions of experiments, the band gap of Fe-C:H film and Fe-Si was about 3.8 eV and 0.85 ~ 0.86 eV, respectively. Urbach tail and the number of defects decreased with increasing the flow rate of hydrogen.

Keywords:Fe-C:H film;island growth;band gap;urbach tail;defects

[References]

Luithardt W, Benndorf C, Diarnond Related Mater., 6, 533 (1997)
Wen XG, Zhou KL, Zhang Y, Cao WM, Thin Solid Films, 303(1-2), 146 (1997)
Lefki K, Muret P, Bustarret E, Boutarek N, Madar R, Chevrier J, Derrien J, Brunel M, Solid State Commun., 80, 791 (1991)
Kim KS, Jeon BJ, Jung IH, J. Korean Ind. Eng. Chem., 10(1), 105 (1999)
Kim KS, Yoon YS, Jung IH, J. Korean Ind. Eng. Chem., 10(3), 343 (1999)
Wohllebe A, Hollander B, Mesters S, Dieker C, Crecelius G, Michelsen W, Mantl S, Thin Solid Films, 287(1-2), 93 (1996)
Yoshihiro H, Noboru N, Shinya T, Shoichi N, Yasuo K, Yusinori K, Jpn. J. Appl. Phys., 30(5), L108 (1991)
Yoon YS, Jung IH, J. Korean Ind. Eng. Chem., 13(8), 754 (2002)
Lange H, Thin Solid Films, 381(2), 171 (2001)

[Related Articles]

[1] Luithardt W, Benndorf C, Diarnond Related Mater., 6, 533 (1997)

[2] Wen XG, Zhou KL, Zhang Y, Cao WM, Thin Solid Films, 303(1-2), 146 (1997)

[3] Lefki K, Muret P, Bustarret E, Boutarek N, Madar R, Chevrier J, Derrien J, Brunel M, Solid State Commun., 80, 791 (1991)

[4] Kim KS, Jeon BJ, Jung IH, J. Korean Ind. Eng. Chem., 10(1), 105 (1999)

[5] Kim KS, Yoon YS, Jung IH, J. Korean Ind. Eng. Chem., 10(3), 343 (1999)

[6] Wohllebe A, Hollander B, Mesters S, Dieker C, Crecelius G, Michelsen W, Mantl S, Thin Solid Films, 287(1-2), 93 (1996)

[7] Yoshihiro H, Noboru N, Shinya T, Shoichi N, Yasuo K, Yusinori K, Jpn. J. Appl. Phys., 30(5), L108 (1991)

[8] Yoon YS, Jung IH, J. Korean Ind. Eng. Chem., 13(8), 754 (2002)

[9] Lange H, Thin Solid Films, 381(2), 171 (2001)