The growth of native sulphide films on Hg1-xCdxTe (MCT) by potential steps to two different electrochemical growth regions has been studied by in-situ ellipsometry, photocurrent spectroscopy and second harmonic generation (SHG) rotational anisotropy. Films grown at -0.4 V versus SCE were porous and consisted mainly of cubic close packed (ccp) Us. The photocurrent spectrum of the film exhibited a cut-off which closely conformed to the expected bandgap of CdS. The gradual increase in SH intensity as the sulphide film thickened was due to a contribution to the overall SH signal from the CdS film itself. No evidence of any hcp species was apparent in the rotational anisotropy patterns, with the four-fold pattern expected for the vicinal MCT surface being maintained even after film growth. When the potential was stepped to -0.3 V. the film grown absorbed the ellipsometer radiation once a thickness of 86 nm was reached. Photocurrent measurements showed a tail extending into the red region of the spectrum. These phenomena have been attributed to the incorporation of ccp HgS into the sulphide film as at this potential, the electrochemical reaction of the HgTe component of MCT can occur. SHG rotational anisotropy confirmed the four-fold symmetry of the ccp surface film. (C) 2003 Elsevier Ltd. All rights reserved.