Formation of PZT from Multilayer-Structured PbTiO<sub>3</sub> and PbZrO<sub>3</sub> Thin Films Prepared by Plasma-Enhanced Chemical Vapor Deposition

Won Gyu Lee; Seong Ihl Woo

Journal of Industrial and Engineering Chemistry, Vol.10, No.3, 379-383, May, 2004

Formation of PZT from Multilayer-Structured PbTiO₃ and PbZrO₃ Thin Films Prepared by Plasma-Enhanced Chemical Vapor Deposition

Won Gyu Lee^†, and Seong Ihl Woo¹

Department of Chemical Engineering, Kangwon National University, Chunchon 200-701, Korea
¹Center for Ultramicrochemical Process Systems, Department of Chemical & Biomolecular Engineering, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Korea

E-mail:

From the amorphous multilayer thin films composed of PbTiO₃ and PbZrO₃ formed by a plasma-enhanced metal-organic chemical vapor deposition method, we have prepared single-phase PZT thin films by interdiffusion through an appropriate thermal annealing process. The transformation to a single-phase PZT from the multilayer was initiated at around 450 ℃ and was almost completed at 550 ℃ under an annealing time of 1 h. Typically, when a fourfold layer of PbZrO₃/PbTiO₃/PbZrO₃/PbTiO₃ was constructed and sequentially annealed at 650 ℃ under ambient O₂ for 1 h, the resulting films showed characteristics of a perovskite-type PZT and a uniform distribution of each element along the depth of the film. The electrical properties of the prepared PZT thin film (Zr/Ti = 54/46, 180 nm) on a Pt-coated substrate were as follows: dielectric constant ε_r = 415, coercive field E_c = 200 and - 140 kV/cm, and remanant polarization P_r = 12 μC/cm² at an applied voltage of 6 V.

Keywords:multilayered thin films;interdiffusion;metal-organic chemical vapor deposition;PZT

[References]

Okuyama M, Matsui Y, Hakano H, Nakagawa T, Hamakana Y, Jpn. J. Appl. Phys., 18, 1663 (1979)
Bondurant DW, Ferroelectrics, 112, 273 (1990)
Polla DL, Schiller P, Integr. Ferroelectr., 7, 359 (1995)
Jaffe B, Cook WR, Jaffe H, Piezoelectric Ceramics, Academic Press, London (1971)
Murarka SP, Silicides for VLSI Applications, Academic Press, NY (1982)
Tochitsky EI, Romanova NI, Thin Solid Films, 110, 55 (1983)
Li CC, Desu SB, Ceram. Trans., 25, 59 (1991)
Li CC, Desu SB, Mater. Res. Soc. Symp. Proc., 243, 387 (1992)
Iijima T, He G, Funakubo H, J. Cryst. Growth, 236, 248 (2002)
Lee WG, Woo SI, Kim JC, Choi SH, Oh KH, Appl. Phys. Lett., 63, 2511 (1993)
Lee WG, Woo SI, Integr. Ferroelectr., 5, 107 (1994)
Tabata H, Kawai T, Kaeai S, Murata O, Fujoka J, Minakata S, Appl. Phys. Lett., 59, 2354 (1991)
Arlt G, Neumann H, Ferroelectrics, 87, 109 (1988)
Scott JF, Paz de Araujo CA, Melnick BM, McMillan LD, Zuleeg R, J. Appl. Phys., 70, 382 (1991)
Dormans GJM, de Keijer M, van Veldhoven PJ, Mater. Res. Soc. Symp. Proc., 243, 203 (1992)
Arlt G, Hennings D, de With G, J. Appl. Phys., 58, 1619 (1985)
Seo KW, Cho SH, J. Ind. Eng. Chem., 7(2), 87 (2001)

[Referenced By]

[Related Articles]

[1] Okuyama M, Matsui Y, Hakano H, Nakagawa T, Hamakana Y, Jpn. J. Appl. Phys., 18, 1663 (1979)

[2] Bondurant DW, Ferroelectrics, 112, 273 (1990)

[3] Polla DL, Schiller P, Integr. Ferroelectr., 7, 359 (1995)

[4] Jaffe B, Cook WR, Jaffe H, Piezoelectric Ceramics, Academic Press, London (1971)

[5] Murarka SP, Silicides for VLSI Applications, Academic Press, NY (1982)

[6] Tochitsky EI, Romanova NI, Thin Solid Films, 110, 55 (1983)

[7] Li CC, Desu SB, Ceram. Trans., 25, 59 (1991)

[8] Li CC, Desu SB, Mater. Res. Soc. Symp. Proc., 243, 387 (1992)

[9] Iijima T, He G, Funakubo H, J. Cryst. Growth, 236, 248 (2002)

[10] Lee WG, Woo SI, Kim JC, Choi SH, Oh KH, Appl. Phys. Lett., 63, 2511 (1993)

[11] Lee WG, Woo SI, Integr. Ferroelectr., 5, 107 (1994)

[12] Tabata H, Kawai T, Kaeai S, Murata O, Fujoka J, Minakata S, Appl. Phys. Lett., 59, 2354 (1991)

[13] Arlt G, Neumann H, Ferroelectrics, 87, 109 (1988)

[14] Scott JF, Paz de Araujo CA, Melnick BM, McMillan LD, Zuleeg R, J. Appl. Phys., 70, 382 (1991)

[15] Dormans GJM, de Keijer M, van Veldhoven PJ, Mater. Res. Soc. Symp. Proc., 243, 203 (1992)

[16] Arlt G, Hennings D, de With G, J. Appl. Phys., 58, 1619 (1985)

[17] Seo KW, Cho SH, J. Ind. Eng. Chem., 7(2), 87 (2001)