We report the electrochemical growth of a well-oriented 3D nanostripe architecture of Sb on Cu(100), the system of which has a large crystallographic misfit but still shows thickness-independent growth features. A coincidence between Sb and Cu(100) occurs with 5 x d(Sb[110]) = 6 x d(Cu[0 (1) over bar0]) and d(Sb[1 (1) over bar0]) = 2 x d(Cu[001]). Two observed factors are credited to the formation of periodically separated 2D arrays of similar to1-nm-wide nanostripes in the nanostructure; they are the high number of coincidences in Sb[110] as well as the discontinuity of coincidence lattices in Sb[110] formed to release the residual misfit. The vertical alignment of the nanostripes is achieved following the layer-by-layer epitaxy of nanostripes, leading to the formation of a thick nanostripe film with regular straw-mat-type stacking.