This article presents the results of evaluation of process-induced damage and improved reflectivity of an extreme ultraviolet (EUV) mask fabricated using a blank consisting of a multilayer, a Si capping layer, a CrN buffer layer, and a TaBN absorber. Long-term. storage causes a centroid wavelength shift and stress change in the multilayer. The multilayer blank annealed at 90degreesC was quite stable in centroid wavelength and film stress against resist baking at 135degreesC and air storage. After the CrN buffer layer was etched with a mixture Of Cl-2 and O-2 gases, the mask featured reflectivity loss of 1.5% due to the additional oxide layer generated On the Si capping layer. The reflectivity loss was able to be completely restored to its original value by treatment with a diluted HF solution. An EUV mask with a high reflectivity of 65% and excellent reflectivity uniformity of 0.7% 3sigma was demonstrated using a blank consisting of a 40-period multilayer and a Si capping layer through a newly developed damage-free process that includes HF treatment. (C) 2003 American Vacuum Society.