The hold temperature of an anneal plays a crucial role in controlling the final activation and diffusion of dopants. A study on the influence of a variety of low temperature preanneals on the behavior of dopants and defects for low energy germanium preamorphization is conducted. Si wafers are preamorphized with 1 x 10(15) cm(-2) Ge+ at energies of 10, 12, 15, 20, and 30 keV and implanted with 1 x 10(15) cm(-2), 1 keV B+. Furnace preanneals are performed at 450, 550, 650, and 750 degreesC; the samples are subsequently subjected to a spike RTA at 950 degreesC. Defect analyses indicate an energy threshold above which the preanneal has an effect on the defect density. Further experiments are conducted on the 10 keV Ge+ preamorphizing implant in which the second anneal step is conducted at 750 degreesC for various times. An analysis of the defect evolution with time reveals that the evolution does' not follow previously reported Ostwald ripening-type behavior. The microstructure is populated with very small dot-like defects, which simply dissolve with time, suggesting that the boron may play some role in the defect evolution. (C) 2004 American Vacuum Society.