화학공학소재연구정보센터
Journal of Vacuum Science & Technology A, Vol.21, No.4, 1298-1301, 2003
Electronic structure of SixSn((1-x))/Si(111)-(root 3 X root 3)R30 degrees phases
We report on an investigation on the electronic band structure of the SixSn(1-x)/Si(111)-(root3 x root3)R30degrees phases using angle-resolved photoemission. This reconstruction is observed in the coverage range between 0.15 and 0.40 ML. We investigated its surface states bands as a function of coverage. While there is no structural indication of a (3 x 3) ordering at low temperature, several features typical of the (3 x 3) phase are found in the valence band. We present also an analysis on the influence of the Si intermixing in the surface state properties. (C) 2003 American Vacuum Society.