We have used scanning tunneling microscopy (STM) to image charged defects on the clean (100)-(2 x 1) surface of p-type silicon. In the absence of "C"-type defects, band bending can occur during STM imaging, allowing near surface charge to influence the state density contributing to the tunnel current. As in the case of cleavage faces of III-V semiconductor crystals, the charge-induced band bending produces long range enhancements superimposed on the periodic surface lattice. The charged defects observed in this work are of the types commonly observed elsewhere in clean Si(100) - (2 x 1) STM studies, however, not all defects of a given type appear charged. This would indicate subtle differences in defect structure that are not obvious at higher sample bias. This work demonstrates the ability to observe charged features on the clean Si(100) surface, which will be important for cur-rent and future research focused on producing atomic scale electronic structures. (C) 2003 American Vacuum Society.