Radio-frequency sputtering was used to deposit near-stoichiometric Bi1.5Zn1.0Nb1.5O7 (BZN) films. Composition, crystallinity, and phase purity of the films were investigated by Rutherford backscattering spectrometry, x-ray, diffraction, and transmission electron microscopy (TEM). X-ray diffraction detected cubic pyrochlore in films that were annealed above 400 degreesC. Films were fully crystallized at 750 degreesC. TEM and electron diffraction confirmed the cubic pyrochlore structure of the grains. Dielectric constant and loss were measured using planar Si/SiO2/Pt/BZN/Pt and Al2O3/Pt/BZN/Pt capacitor structures, respectively. After annealing at 750 degreesC, films on Pt coated silicon wafers showed a permittivity of 170, low dielectric losses, and a large electric field tunability of the dielectric constant at a measurement frequency of I MHz. Dielectric loss tangents improved when substrates were moderately heated during deposition. (C) 2003 American Vacuum Society.