In this work, the cyclic perfluorinated ether (c-C4F8O) with very high destructive removal efficiencies (DREs) was used as an alternative process gas for cleaning of the silicon nitride chemical vapor deposition chamber. Direct plasma cleaning of silicon nitrides in a capacitively coupled plasma mode using the gas mixtures of C-C4F8O/O-2, c-C4F8O/O-2+Ar, and c-C4F8O/O-2+N-2 was investigated in order to evaluate the effects of additive gases (Ar and N-2) on the global warming. Emitted net volumes of perfluorocompounds during cleaning of silicon nitride were quantitatively measured by Fourier transform-infrared spectroscopy. The effects of additive At and N-2 on the DRE and the million metric tons of carbon equivalent (MMTCE) values were evaluated from the volumetric emission of effluents. MMTCE value for the optimized c-C4F8O/O-2 cleaning was decreased by congruent to64% compared to that of the C2F6/O-2 chemistry as a result of decreased emission of CF4. During the cleaning process using c-C4F8O/O-2 gas mixtures with additive Ar and N-2, the DRE value as high as congruent to98% was obtained and MMTCE values were reduced by congruent to78% and congruent to81% compared to those of C2F6/O-2 cleaning, respectively, as a combined result of the decreased CF4 emission and increased cleaning rate. (C) 2004 American Vacuum Society.