The performance of Schottky rectifiers fabricated with dielectric overlap edge termination on epitaxial layers grown on a free-standing GaN template is reported. The power figure-of-merit (V-B)(2)/R-ON where V-B is the reverse breakdown voltage and R-ON is the on-state resistance was 11.5 MW cm(-2). The forward turn-on voltage was similar to3.5 V at 25degreesC, with an on-state resistance of similar to5 x 10(-3) Omega cm(2). The reverse recovery time was less than or equal to 50 ns in switching from forward bias to reverse bias. The reverse breakdown showed a temperature coefficient of -0.45 V/C. (C) 2004 American Vacuum Society.