Thin Solid Films, Vol.442, No.1-2, 98-101, 2003
Preparation of sub-nanometer thickness-controlled tin dioxide films by pulsed atomic-layer CVD
Tin dioxide coatings of sub-nanometer thickness on glass were prepared between 325 and 525 degreesC by pulsed atomic-layer chemical vapor deposition. The sample films grown on substrates at 400 to 450 degreesC exhibited a constant growth rate of 1.6 Angstrom/cycle, corresponding to one-fourth the length of tin dioxide (110) lattice spacings. We propose herein a dry method of thickness measurement for very thin, sub-nanometer-thick films based on X-ray photoelectron spectroscopy depth profiles using argon ion sputtering and etching time values calibrated using both stylus and optical interference methods for tin dioxide films. The preferred orientations of the films are (110) and (100), and the tentative grain size is 80X100 nm for 10-nm-thick films. Optical transmittance for visible light exceeds 0.9, and optical absorption edges at room temperature occur at 3.75 eV. Ultra-violet photoelectron spectroscopy (UPS) measurements of the electronic density of states are performed on as-grown films surfaces. (C) 2003 Elsevier B.V. All rights reserved.