Indium nitride films are deposited in the presence of nitrogen plasma by 'activated reactive evaporation (ARE)' process on silicon substrate maintained at room temperature. Indium powder was evaporated by resistive heating in the presence of nitrogen plasma excited by a radio frequency (RF) power source (13.56 MHz). The refractive index of 2.91 obtained by ellipsometry, was in good agreement with that of the standard value of indium, nitride (eta=2.9). Observation of the films by scanning electron microscope shows a smooth and pinhole-free surface and the diffraction pattern reveals the polycrystalline nature with characteristics of hexagonal structure. ln(3)d(5/2), In3d(3/2) and Nls levels X-ray photoelectron spectra are observed at binding energies of 443.4 ev, 451.8 eV and 396.5 eV, respectively, indicating the formation of indium nitride. Fourier transform infrared spectrum of the deposited film shows the presence of In-N bond. These results indicate the feasibility of the ARE process for the deposition of indium nitride on silicon (100) substrate maintained at room temperature. (C) 2003 Elsevier B.V. All rights reserved.