The photoconductivity (PC) of TlGaS2 layered single crystals was investigated in the 77-300 K temperature, 1000-2500 1x excitation intensity, 10-25 V applied voltage, and 415-535 nm wavelength ranges. Both the alternating current photoconductivity (ac-PC) and the spectral distribution of the photocurrent were studied at different values of light intensity, applied voltage, and temperature. Dependencies of the carrier lifetime on light intensity, applied voltage, and temperature have been investigated as a result of the ac-PC and direct current photoconductivity (dc-PC) measurements. The temperature dependence of the energy gap width was described as a result of studying the dc-PC. The values of the photoconductivity response time, which are reported from the light intensity dependence of ac-PC, presents that there is a continuous distribution of traps in the energy gap.