Yttrium oxide-based metal-insulator-metal (MIM) capacitors were investigated. The dielectric films were grown on Si/TiSi2/TiN substrates using a low thermal budget metalorganic chemical vapor deposition process (Tless than or equal to 350 degreesC). Low-temperature (450 degreesC) or high-temperature (700 degreesC) postdeposition annealings were carried out in different atmospheres (O-2 or argon). X-ray diffraction, x-ray photoelectron spectroscopy, and secondary ion mass spectrometry were used to determine the structural and microstructural changes in the films. The films were incorporated into simple MIM test structures. A significant capacitance value of the order of 2.2 fF/mum, a low leakage current density (similar to10(-8) A cm(-2) at 10 V) and a high electrical breakdown field of 7 - 8 MV/cm were measured for capacitors prepared from as-deposited or low temperature (450 degreesC) annealed films. These results indicate that yttrium oxide is a very promising dielectric to be used in silicon integrated circuits applications. (C) 2004 American Vacuum Society.