Atomic layer deposition (ALD) processes for HfO2 and HfxSi1-xO2 high-k dielectric thin films using liquid precursors and ozone were evaluated. Tetrakis(ethylmethylamino)hafnium (TEMAHf) precursor provides HfO2 films with superior quality as compared to Hf(t-butoxide)(4) precursor in terms of deposition rate, purity, and electrical properties of the films. ALD processes for hafnium silicate films have been developed by co-injection of TEMAHf and tetrakis(ethylmethylamino) silicon precursors. Alternating pulses of the Hf/Si precursor vapor mixture and ozone allow process temperatures below 400degreesC to grow HfxSi1-xO2 film. The Hf and Si precursors can be converted to vapor for delivery to the deposition chamber either by bubbling an inert carrier gas separately through each liquid or by using a liquid vaporization unit. The co-injection process enables the formation of homogeneous single-layer hafnium silicate films as deposited. (C) 2004 American Vacuum Society.