High-temperature-processing-induced "double-stacking fault" cubic inclusions in 4H-SiC were studied with ballistic electron emission microscopy (BEEM). Large BEEM current and a similar to0.53 eV local reduction in the Schottky barrier height (SBH) were observed where the inclusions intersect a Pt interface, confirming the quantum-well nature of the inclusions and providing nanometer scale information about local electronic behavior. Measured spatial variations in the BEEM cur-rent are related to the inclusion orientation and local surface step structure. An observation of an anomalously low SBH is discussed, suggesting the existence of a triple- or quadruple-stacking fault inclusion. (C) 2004 American Vacuum Society.