Cubic gallium nitride (GaN) thin films were grown at room temperature on silicon (100)-oriented substrates by radio frequency (rf) planar magnetron sputtering of a GaN target in a pure nitrogen atmosphere. The rf power applied to the GaN cathode target was varied in order to determine the influence of film growth rate on the texture and properties of cubic GaN films. The growth rate of the GaN films was an approximately linear function of the rf cathode target power. X-ray diffraction theta-2theta and pole-figure scans revealed that all the GaN films possess a predominant cubic zinc-blende phase having a textured structure with (111) crystallographic planes oriented preferentially parallel to the surface. The a lattice parameter of the cubic GaN was determined to be approximately 4.59 A. X-ray rocking curve analysis showed that the degree of [111] preferred orientation is higher for the GaN films grown at lower growth rates (similar to 16 Angstrom/min). Higher concentration of oxygen impurity was present in the GaN films grown at these slow growth rates. Auger depth profiles indicated that the oxygen impurity was incorporated into the GaN films during growth rather than diffusing into the films after the growth or adsorbing during the AES analysis. (C) 2004 American Vacuum Society.