The effect of annealing on SiGe films was investigated using scanning photoelectron spectroscopy (SPEM). Films annealed at a temperature above 950degreesC in N-2 ambient show a drastic morphological change. The difference in the chemical state between an islandlike surface and flat surface is dependent on the Si and Ge contents. In addition, the chemical state of the flat surface is closely related to differences in Si and Ge content, resulting in a donutlike shape. The oxidation of Ge is suppressed during the annealing process because of the lower heat of formation of GeO2 than for SiO2. Thus, differences in content and the extent of oxidation are major determinants of the chemical state in the islandlike shape. The characteristic donutlike shape reflects kinetic changes in the SiGe content during the annealing process. (C) 2004 American Vacuum Society.